Determination of the EL2 introduction rate and Fermi-level shift due to proton and pion irradiation in semi-insulating GaAs

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 134, Issue 1, 1998, Pages 53-60

  Rogalla, M ^a   Battke, M ^a   Duda, N ^a   Geppert, R ^a   Goppert R ^a   Irsigler, R ^a   Ludwig, J ^a   Runge, K ^a   Schmid, Th ^a   Joerger, W ^a   Benz, K W ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CHARGED PARTICLES; ENERGY DISSIPATION; FERMI LEVEL; INFRARED SPECTROSCOPY; IRRADIATION; RADIATION DAMAGE; RADIATION HARDENING; SEMICONDUCTOR GROWTH;

NON IONIZING ENERGY LOSS (NIEL); PION IRRADIATION; PROTON IRRADIATION; RADIATION HARDNESS FACTOR;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031699381     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)80033-5     Document Type: Article

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