Radiation damage due to pions and protons in SI-GaAs and their influence on the detector performance

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 410, Issue 1, 1998, Pages 41-45

  Rogalla, M ^a   Battke, M ^a   Duda, N ^a   Geppert, R ^a   Goppert R ^a   Ludwig, J ^a   Irsigler, R ^a   Schmid, Th ^a   Runge, K ^a   Soldner Rembold A ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

EL2 introduction rate; Gallium arsenide; Pions; Protons; Radiation damage; Radiation detectors

Indexed keywords

ARSENIC; CRYSTAL GROWTH FROM MELT; ENERGY DISSIPATION; INFRARED RADIATION; IONIZATION; LIGHT ABSORPTION; PROTONS; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE;

HADRONS; LIQUID ENCAPSULATED CZOCHRALSKI (LEC) GROWTH; NONIONIZING ENERGY LOSSES; PIONS; SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0032089957     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)00145-4     Document Type: Article

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