Ultra-high voltage device termination using the 3D RESURF (super-junction) concept - Experimental demonstration at 6.5 kV

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2001, Pages 129-132

  Udrea, F ^a   Trajkovic, T ^a   Thomson, J ^a   Coulbeck, L ^a   Waind, P R ^a   Amaratunga, G A J ^a   Taylor, P ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; MOS DEVICES; POWER ELECTRONICS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS;

ULTRA-HIGH VOLTAGE DEVICES;

ELECTRIC BREAKDOWN OF SOLIDS;

EID: 0034835108     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)