Effects of rapid thermal annealing (RTA) process on pysical and electrical properties of Bi4La4-xTi3O12 (BLT) thin film

Integrated Ferroelectrics

Volumn 39, Issue 1-4, 2001, Pages 151-159

  Yang, Woo Seok ^a   Kim, Nam Kyeong ^a   Yeom, Seung Jin ^a   Kweon, Soon Yong ^a   Choi, Eun Seok ^a   Roh, Jae Sung ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

Crystalline orientation; Grain size; La substituted bismuth titanate (BLT); MOD; RTA; Switching polarization; Thin film

Indexed keywords

CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; FURNACES; GRAIN SIZE AND SHAPE; LIGHT POLARIZATION; RAPID THERMAL ANNEALING; THERMAL EFFECTS;

ELECTRICAL PROPERTIES; METALORGANIC DECOMPOSITION; RTA TEMPERATURES;

THIN FILMS;

EID: 0013222295     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580108011938     Document Type: Conference Paper

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