Sub-100 nm SBT films for low voltage and high density FeRAM applications

Integrated Ferroelectrics

Volumn 25, Issue 1-4, 1999, Pages 169-177

  Narayan, S ^a   Joshi, V ^a   Mcmillan, L ^a   Paz De Araujo, C ^a  

^a Symetrix Corporation   (United States)

Author keywords

Chemical Solution Deposition; CSD; SBT; Thin films; Y1

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; POLARIZATION; RANDOM ACCESS STORAGE; RELIABILITY; STOICHIOMETRY; STRONTIUM COMPOUNDS; TEMPERATURE MEASUREMENT; VOLTAGE MEASUREMENT;

CHEMICAL SOLUTION DEPOSITION; HIGH DENSITY FERROELECTRIC RANDOM ACCESS MEMORY; STRONTIUM BISMUTH TANTALATE;

THIN FILMS;

EID: 0033332683     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589908210169     Document Type: Article

References (3)

1. C.A. Araujo, J. D. Cuchiaro, L. D. McMillan, M.C. Scott and J.F. Scott, Nature, 374, 627 (1995).
2. J. J. Lee, C. L. Thio and S. B. Desu, J. Appl. Phys., 78, 5073 (1995).
3. J. Zhu, X. Zhang, Y. Zhu and S. B. Desu, J. Appl. Phys., 83, 1610 (1998).