High performance AlGaN/GaN HEMTs with recessed gate on sapphire substrate

Annual Device Research Conference Digest

Volumn , Issue , 2001, Pages 81-82

  Sano, Y ^a   Yamada, T ^a   Mita, J ^a   Kaifu, K ^a   Ishikawa, H ^a   Egawa, T ^a   Umeno, M ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRON GAS; GATES (TRANSISTOR); OHMIC CONTACTS; REACTIVE ION ETCHING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE;

CURRENT SATURATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034875419     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)