High-resolution potential mapping in semiconductor nanostructures by cross-sectional scanning tunneling microscopy and spectroscopy

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1932-1934

  Modesti, S ^a,b   Furlanetto, D ^a,b   Piccin, M ^a   Rubini, S ^a   Franciosi, A ^a,b  

^a LABORATORIO TASC   (Italy)

^b UNIVERSITY OF TRIESTE   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; ELECTROSTATICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

SPATIAL RESOLUTION;

NANOSTRUCTURED MATERIALS;

EID: 0037464245     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1563310     Document Type: Article

References (23)

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20. The measured potential along the δ-doped layers - the [110] direction oscillates with an amplitude of about 0.3 V, because of the random distribution of the dopants - easily delectable in the images with a resolution of about 2 nm - that are spread in the (001) plane with a mean distance of about 5 nm. The typical noise level in the measurements was of the order of 30 mV, mainly due to surface Ga vacancies [see G. Lengel, R. Wilkins, G. Brown, and M. Weimer, J. Vac. Sci. Technol. B 11, 1472 (1993)], that increase in number with time at preferential locations corresponding to subsurface donors, and other less common surface defects [S. Modesti, D. Furlanetto, M. Piccin, S. Rubini, and A. Franciosi (unpublished)].
21. The measured potential along the δ-doped layers - the [110] direction oscillates with an amplitude of about 0.3 V, because of the random distribution of the dopants - easily delectable in the images with a resolution of about 2 nm - that are spread in the (001) plane with a mean distance of about 5 nm. The typical noise level in the measurements was of the order of 30 mV, mainly due to surface Ga vacancies [see G. Lengel, R. Wilkins, G. Brown, and M. Weimer, J. Vac. Sci. Technol. B 11, 1472 (1993)], that increase in number with time at preferential locations corresponding to subsurface donors, and other less common surface defects [S. Modesti, D. Furlanetto, M. Piccin, S. Rubini, and A. Franciosi (unpublished)].
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