Copper damascene interconnects for the 65 nm technology node: A first look at the reliability properties

Proceedings of the IEEE 2002 International Interconnect Technology Conference, IITC 2002

Volumn , Issue , 2002, Pages 265-267

  Steinlesberger, G ^a,c   Von Glasow, A ^a   Engelhardt, M ^a   Schindler, G ^a   Honlein W ^a   Holz, M ^b   Bertagnolli, E ^c  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b HELMUT SCHMIDT UNIVERSITY   (Germany)

^c VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COPPER;

COPPER DAMASCENE INTERCONNECTS; COPPER INTERCONNECTS; CURRENT CARRYING CAPABILITY; CURRENT TECHNOLOGY; LIFETIME ESTIMATION; RELIABILITY PERFORMANCE; RELIABILITY PROPERTIES; SEED LAYER THICKNESS;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84961751360     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2002.1014952     Document Type: Conference Paper

References (5)

1. The International Technology Roadmap for Semiconductors, 2001
2. M. Engelhardt, G. Schindler, K. Mosig, G. Steinlesberger, W. Steinhögl, G. Gebara, "Extending copper metallization technology for wiring to end-of-roadmap feature sizes", in press (Proc. of Adv. Met. Conf. 2001)
3. W. Steinhögl, M. Engelhardt, G. Schindler, G. Steinlesberger, "Modelling the electrical resistivity of sub 50 nm copper wires", unpublished (Proc. of ULIS, 2002)
4. K. S. Low, H. Poetzlberger, A. O'Neill, Advanced Interconnects and Contacts. Symposium, 1999
5. A. von Glasow, A.H. Fischer, Proc. of Adv. Met. Conf., 2000, p. 415-423