Coherence of the gate and drain noise in stressed AlGaAs-InAlGaAs PHEMTs

Microelectronics Reliability

Volumn 41, Issue 1, 2001, Pages 87-97

  Jones, B K ^a   Graham, C N ^a   Konczakowska, A ^b   Hasse, L ^b  

^a LANCASTER UNIVERSITY   (United Kingdom)

^b GDANSK UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

STRESSED PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035151491     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(00)00077-9     Document Type: Article

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