Hall effect and hole densities in Ga1-xMnxAs

Applied Physics Letters

Volumn 81, Issue 16, 2002, Pages 3010-3012

  Edmonds, K W ^a   Wang, K Y ^a   Campion, R P ^a   Neumann, A C ^a   Foxon, C T ^a   Gallagher, B L ^a   Main, P C ^a  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HOLE DENSITIES; LOW RESISTIVITY; MAXIMUM VALUES; MEAN FIELD; MN CONCENTRATIONS;

CURIE TEMPERATURE; EXPERIMENTS; GALLIUM; HALL EFFECT; MANGANESE;

HOLE CONCENTRATION;

EID: 79956020274     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1512822     Document Type: Article

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