Field enhanced diffusion of nitrogen and boron in 4H-silicon carbide

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4285-4290

  Phelps, G J ^a   Chester, E G ^a   Johnson, C M ^a   Wright, N G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; MATHEMATICAL MODELS; SILICON CARBIDE; SUBSTRATES;

FIELD ENHANCED DIFFUSION (FED);

ION IMPLANTATION;

EID: 0142087583     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1604956     Document Type: Article

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