On the nature of hydrogen-related centers in p-type irradiated silicon

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 210-212

  Feklisova, O ^a,b   Yarykin, N ^a,b   Yakimov, E B ^a   Weber, J ^b  

^a INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Hydrogen; Radiation defects; Silicon

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; ETCHING; HYDROGENATION; IRRADIATION;

RADIATION DEFECTS; WET CHEMICAL ETCHING;

SEMICONDUCTING SILICON;

EID: 0035675141     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00725-6     Document Type: Article

References (11)