Structure - Property relationships of thin films of epitaxial ferroelectric bismuth-layered perovskites with even and odd Aurivillius' parameters

Materials Research Society Symposium - Proceedings

Volumn 596, Issue , 2000, Pages 415-426

  Pignolet, A ^a   Harnagea, C ^a   James, A R ^a   Senz, S ^a   Zakharov, N D ^a   Hesse, D ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL ORIENTATION; DEPOSITION; ELECTRODES; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; LANTHANUM COMPOUNDS; PEROVSKITE; PULSED LASER APPLICATIONS; SEMICONDUCTING SILICON; SINGLE CRYSTALS; STRONTIUM COMPOUNDS;

AURIVILLIUS PARAMETERS; BISMUTH LAYERED PEROVSKITE; COERCIVE FIELD; FERROMAGNETIC RANDOM ACCESS MEMORY; HYSTERESIS LOOPS; PULSED LASER DEPOSITION; REMANENT POLARIZATION; STRONTIUM TITANATE;

THIN FILMS;

EID: 0033680521     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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