Low-Temperature Growth of Polycrystalline silicon Films by SiCl 4/H2 rf Plasma Enhanced Chemical Vapour Deposition

Chinese Physics Letters

Volumn 20, Issue 10, 2003, Pages 1879-1882

  Lin, Xuan Ying ^a   Huang, Chuang Jun ^a   Lin, Kui Xun ^a   Yu, Yun Peng ^a   Yu, Chu Ying ^a   Chi, Ling Fei ^a  

^a SHANTOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; ENERGY DISPERSIVE SPECTROSCOPY; METALLIC FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON; SILICON COMPOUNDS; TEMPERATURE;

CHEMICAL VAPOR DEPOSITION METHODS; CRISTALLINITY; CRYSTALLINE GRAIN SIZE; DEPOSITION POWER; INFRARED: SPECTROSCOPY; LOW TEMPERATURE GROWTH; POLYCRYSTALLINE SILICON FILMS; RF PLASMA; SPECTROSCOPY MEASUREMENTS; SPECTROSCOPY:SPECTROSCOPY;

INFRARED SPECTROSCOPY;

EID: 0142021999     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/20/10/364     Document Type: Article

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