Electrical and structural properties of low temperature boron- and phosphorus-doped polycrystalline silicon thin films prepared by ECR-CVD

Applied Surface Science

Volumn 142, Issue 1, 1999, Pages 400-406

  Hsiao, H L ^a   Shieh, Y Y ^a   Lee, R S ^a   Wang, R Y ^a   Wang, K C ^a   Hwang, H L ^a   Yang, A B ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TUNGHAI UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; ELECTRON MICROSCOPY; FILM PREPARATION; GRAIN SIZE AND SHAPE; HALL EFFECT; SEMICONDUCTOR DOPING; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS;

HYDROGEN DILUTION; IMPURITY SCATTERING; STRUCTURAL PROPERTIES;

SEMICONDUCTING SILICON;

EID: 0032652145     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00683-7     Document Type: Article

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