Competing processes and controlling energies at the Ag/Ge(111) interface

Surface Science

Volumn 371, Issue 2-3, 1997, Pages 420-430

  Venables, J A ^a,c   Metcalfe, F L ^b,d   Sugawara, A ^a,c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b Unicam Analytical Ltd   (United Kingdom)

^c UNIVERSITY OF SUSSEX   (United Kingdom)

^d Zeromag House   (United Kingdom)

Author keywords

Adatoms; Adsorption kinetics; Germanium; Growth; Low index single crystal surfaces; Metal semiconductor interfaces; Models of surface kinetics; Nucleation; Silicon; Silver; Single crystal epitaxy

Indexed keywords

BINDING ENERGY; DIFFUSION IN SOLIDS; ENERGY ABSORPTION; EQUATIONS OF MOTION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NUCLEATION; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR METAL BOUNDARIES; SILVER;

ADATOMS; LOW INDEX SINGLE CRYSTAL SURFACES;

SURFACE PHENOMENA;

EID: 0031075313     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01086-2     Document Type: Article

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