메뉴 건너뛰기




Volumn , Issue , 2000, Pages 773-776

Structural properties of sulfur-implanted diamond single crystals

Author keywords

[No Author keywords available]

Indexed keywords

DEPTH PROFILE; DIAMOND CRYSTALS; DIAMOND SINGLE CRYSTALS; DIAMOND SUBSTRATES; DOPANT DISTRIBUTION; HIGH QUALITY; HIGH TEMPERATURE; HOMOEPITAXIAL DIAMOND; HOST LATTICE; IN-VACUUM; ION CHANNELING; LATTICE LOCATIONS; MAXIMUM DISPLACEMENT; MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION; PARTICLE INDUCED X-RAY EMISSION; RESIDUAL DAMAGE; SUBSTITUTIONAL FRACTION; SULFUR ATOMS; SULFUR IMPLANTATION;

EID: 78649821101     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2000.924268     Document Type: Conference Paper
Times cited : (1)

References (14)
  • 2
    • 0001631804 scopus 로고    scopus 로고
    • J.F.Prins, Phys.Rev.B, vol.61, pp7191-7194, 2000.
    • (2000) Phys.Rev.B , vol.61 , pp. 7191-7194
    • Prins, J.F.1
  • 3
    • 0032666412 scopus 로고    scopus 로고
    • R.Kalish, Carbon, vol.37, pp781-785, 1999.
    • (1999) Carbon , vol.37 , pp. 781-785
    • Kalish, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.