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Volumn , Issue , 2000, Pages 773-776
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Structural properties of sulfur-implanted diamond single crystals
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Author keywords
[No Author keywords available]
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Indexed keywords
DEPTH PROFILE;
DIAMOND CRYSTALS;
DIAMOND SINGLE CRYSTALS;
DIAMOND SUBSTRATES;
DOPANT DISTRIBUTION;
HIGH QUALITY;
HIGH TEMPERATURE;
HOMOEPITAXIAL DIAMOND;
HOST LATTICE;
IN-VACUUM;
ION CHANNELING;
LATTICE LOCATIONS;
MAXIMUM DISPLACEMENT;
MICROWAVE PLASMA-ASSISTED CHEMICAL VAPOR DEPOSITION;
PARTICLE INDUCED X-RAY EMISSION;
RESIDUAL DAMAGE;
SUBSTITUTIONAL FRACTION;
SULFUR ATOMS;
SULFUR IMPLANTATION;
CHEMICAL VAPOR DEPOSITION;
DIAMONDS;
HIGH PRESSURE EFFECTS IN SOLIDS;
ION BEAMS;
ION IMPLANTATION;
PLASMA DEPOSITION;
SULFUR;
SYNTHETIC DIAMONDS;
SINGLE CRYSTALS;
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EID: 78649821101
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/.2000.924268 Document Type: Conference Paper |
Times cited : (1)
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References (14)
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