Defect-mediated carbon incorporation in the Si(0 0 1) surface: Role of stress and carbon-defect interactions

Surface Science

Volumn 544, Issue 2-3, 2003, Pages 277-284

  Sonnet, Ph ^a   Stauffer, L ^a   Selloni, A ^b   Kelires, P C ^c,d  

^a UNIVERSITÉ DE HAUTE ALSACE   (France)

^b PRINCETON UNIVERSITY   (United States)

^c UNIVERSITY OF CRETE   (Greece)

^d INSTITUTE OF ELECTRONIC STRUCTURE AND LASER   (Greece)

Author keywords

Carbon; Density functional calculations; Monte Carlo simulations; Semiconducting surfaces; Surface stress

Indexed keywords

COMPUTER SIMULATION; DEFECTS; DIMERS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING SILICON;

SURFACE RECONSTRUCTION;

SURFACE CHEMISTRY;

EID: 0141905241     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.08.043     Document Type: Article

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