Critical evaluation of photomask needs for competing 65-nm node RET options

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5040 I, Issue , 2003, Pages 171-181

  Progler, Christopher J ^a   Xiao, Guangming ^a  

^a PHOTRONICS INC   (United States)

Author keywords

Defect modeling; Mask fidelity; Photomask tolerances; Resolution enhancement techniques

Indexed keywords

COMPUTER SIMULATION; CONVOLUTION; MATHEMATICAL MODELS; MATHEMATICAL OPERATORS; MONTE CARLO METHODS; PHOTOLITHOGRAPHY; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS;

DEFECT MODELING; MASK FIDELITY; MASK SENSITIVITY MATRIX; PHOTOMASK; RESOLUTION ENHANCEMENT TECHNIQUE;

MASKS;

EID: 0141833791     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485439     Document Type: Conference Paper

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