Metalorganic chemical vapor deposition growth of GaN using a split-flow reactor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 12, 1998, Pages 6301-6308

  Yamashita, Youji ^a   Horio, Naochika ^a   Sato, Hiroyuki ^a   Ebisutani, Takashi ^a   Kamiya, Teruyuki ^a   Taniguchi, Kazuyoshi ^a   Kingo, Yasuro ^a   Imagi, Shinichi ^a   Kato, Kazuhisa ^a  

^a STANLEY ELECTRIC CO LTD   (Japan)

Author keywords

Ambient; Flow visualization; GaN; Hydrodynamics; MOCVD; Reactor

Indexed keywords

CHEMICAL REACTORS; EPITAXIAL GROWTH; FILM GROWTH; FLOW VISUALIZATION; HYDRODYNAMICS; INTERDIFFUSION (SOLIDS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; SPLIT-FLOW REACTORS;

SEMICONDUCTING FILMS;

EID: 0032297818     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.6301     Document Type: Article

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