Negative resist image by dry etching as a novel top surface imaging process for ion beam lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1181-1191

  Arshak, Khalil ^a   Mihov, Miroslav ^a   Arshak, Arous ^a   McDonagh, Declan ^b   Sutton, David ^a   Newcomb, Simon B ^a  

^a UNIVERSITY OF LIMERICK   (Ireland)

^b Integrated Device Technology Inc   (United States)

Author keywords

Dry etching; Focused ion beam; Nanolithography; NERIME process; Silylation

Indexed keywords

ANISOTROPY; CMOS INTEGRATED CIRCUITS; DRY ETCHING; GALLIUM; IMAGING TECHNIQUES; INTEGRATED CIRCUIT MANUFACTURE; NANOTECHNOLOGY; OXYGEN; PHOTORESISTS; SURFACE PROPERTIES;

ANISOTROPIC PROCESSING; FOCUSED ION BEAM LITHOGRAPHY; ION BEAM EXPOSURE; NEGATIVE RESIST IMAGE; SURFACE IMAGING PROCESS;

ION BEAM LITHOGRAPHY;

EID: 0141722643     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485073     Document Type: Conference Paper

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