The application of alternating phase-shifting masks to 140 nm gate patterning (II): Mask design and manufacturing tolerances

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3334, Issue , 1998, Pages 2-14

  Liu, Hua Yu ^a   Karklin, Linard ^b   Wang, Yao Ting ^b   Pati, Yagyensh C ^b  

^a HEWLETT PACKARD COMPANY   (United States)

^b SYNOPSYS INC   (United States)

Author keywords

CD control; Line width variations; Optical lithography; Phase shifting masks

Indexed keywords

FITS AND TOLERANCES; INTEGRATED CIRCUITS; KRYPTON; OPTICAL RESOLVING POWER; PHOTOLITHOGRAPHY;

BINARY MASKS; CD CONTROL; CHIP DESIGNS; GA TE LENGTHS; GATE PATTERNING; LINE WIDTH VARIATIONS; MASK DEFECTS; MASK DESIGNS; MASK MANUFACTURING; OPTICAL LITHOGRAPHY; PHASE ERROR (PE); PHASE-SHIFTING MASKS; POLY GATES; TOTAL VARIATION (TV);

PULSE MODULATION;

EID: 0005213734     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.310717     Document Type: Conference Paper

References (4)

1. M. D. Levenson, N. S. Viswanathan, and R. A. Simpson, "Improving Resolution in Photolithography with a phase-shifting Mask," ITTT Trans. Electron Devices, vol. ED-29, no. 12, December 1982, pp.1812-1846.
2. Hua-Yu Liu, Linard Karklin, Yao-Ting Wang and Y. C. Pati, "The Application of Alternating Phase-shifting Masks to 140 nm Gate Patterning: Line Width Control Improvements and Design Optimization", BACUS 1997 (to be publised).
3. C. N. Berglund, "A Unified Yield Model Incorporating both Defect and Parametric Effects," IEEE Transactions on Semiconductor Manufacturing, Vol. 9, No 3. August 1996.
4. Hua-Yu Liu, Crid Yu, and Bob Gleason, "Effect of reticle errors on systematic intrafield line width variations", Jpn. J. Appl. Phys. 34(12B), Dec. 1995, pp. 6573-6577