Etch mechanism and etch-induced effects in the inductively coupled plasma etching of GaN

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1268-1272

  Cheung, R ^a   Rong, B ^b   Van der Drift, E ^b   Sloof, W G ^c  

^a UNIVERSITY OF EDINBURGH   (United Kingdom)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; INDUCTIVELY COUPLED PLASMA; METALLORGANIC VAPOR PHASE EPITAXY; PLASMA DENSITY; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL DEGRADATION;

ETCHING;

EID: 0141681338     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1575249     Document Type: Conference Paper

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