Characteristics of a metal/ferroelectric/insulator/semiconductor structure using an ultrathin nitrided oxide film as the buffer layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 4 B, 1999, Pages

  Sakamaki, Kazuo ^a   Hirai, Tadahiko ^a   Uesugi, Takumi ^a   Kishi, Hiroshi ^a   Trui, Yasuo ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; FERROELECTRIC MATERIALS; HYSTERESIS; INTERDIFFUSION (SOLIDS); OXIDES; SEMICONDUCTOR INSULATOR BOUNDARIES; SEMICONDUCTOR METAL BOUNDARIES; SILICON COMPOUNDS; SILICON WAFERS; STRONTIUM COMPOUNDS; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

BUFFER LAYERS;

INTERFACES (MATERIALS);

EID: 0032678370     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l451     Document Type: Article

References (17)