Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O 5/Si using Ta2O5 as the buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2940-2942

  Choi, Hoon Sang ^a   Kim, Yong Tae ^b   Kim, Seong Il ^b   Choi, In Hoon ^a  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Coercive field; Ferroelectric; Memory window; SrBi2Ta2O9; Ta2O5

Indexed keywords

BUFFER STORAGE; COERCIVE FORCE; FERROELECTRIC THIN FILMS; LEAKAGE CURRENTS; MAGNETOELECTRIC EFFECTS; MAGNETRON SPUTTERING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MISFET DEVICES; NONVOLATILE STORAGE; RANDOM ACCESS STORAGE; ROM; SEMICONDUCTING SILICON; STRONTIUM COMPOUNDS; SUBSTRATES;

NONDESTRUCTIVE READOUT MEMORY;

FERROELECTRIC MATERIALS;

EID: 0035300646     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2940     Document Type: Article

References (12)