-
1
-
-
0031108794
-
64°C continuous-wave operation of 1.5μm vertical-cavity laser
-
MARGALIT, N., PIPREK, J., ZHANG, S., BABIC, D.I., STREUBEL, K., MIRIN, R.P., WESSELMANN, J.R., BOWERS, J.E., and HU, E.L.: '64°C continuous-wave operation of 1.5μm vertical-cavity laser', IEEE J. Sel. Top. Quantum Electron., 1997, 3, pp. 359-365
-
(1997)
IEEE J. Sel. Top. Quantum Electron.
, vol.3
, pp. 359-365
-
-
Margalit, N.1
Piprek, J.2
Zhang, S.3
Babic, D.I.4
Streubel, K.5
Mirin, R.P.6
Wesselmann, J.R.7
Bowers, J.E.8
Hu, E.L.9
-
2
-
-
0032186783
-
Long-wavelength (1.55μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBRs by wafer fusion
-
OSHISO, Y., AMANO, C., ITOH, Y., TAKENOUCHI, H., and KUROKAWA, T.: 'Long-wavelength (1.55μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBRs by wafer fusion', IEEE J. Quantum Electron., 1998, 34, pp. 1904-1913
-
(1998)
IEEE J. Quantum Electron.
, vol.34
, pp. 1904-1913
-
-
Oshiso, Y.1
Amano, C.2
Itoh, Y.3
Takenouchi, H.4
Kurokawa, T.5
-
3
-
-
0032650839
-
-55c pulse lasing at 1.56μm of all-monolithic InAlGaAs-InP vertical cavity lasers
-
KAZMIERSKI, C., DEBRAY, J.P., MADANI, R., SAGNES, I., OUGAZZADEN, A., BOUADMA, N., ETRILLARD, J., ALEXANDRE, F., and QUILLEC, M.: '-55C pulse lasing at 1.56μm of all-monolithic InAlGaAs-InP vertical cavity lasers', Electron. Lett., 1999, 35, pp. 811-812
-
(1999)
Electron. Lett.
, vol.35
, pp. 811-812
-
-
Kazmierski, C.1
Debray, J.P.2
Madani, R.3
Sagnes, I.4
Ougazzaden, A.5
Bouadma, N.6
Etrillard, J.7
Alexandre, F.8
Quillec, M.9
-
4
-
-
0033123732
-
Metamorphic DBR and tunnel-junction injection: CW RT monolithic long-wavelength VCSEL
-
BOUCART, J., STARCK, C., GABORIT, F., PLAIS, A., BOUCHÉ, N., DEROUIN, E., REMY, J.C., BONNET-GAMARD, J., GOLDSTEIN, L., FORTIN, C., CARPENTIER, D., SALET, P., BRILBUET, F., and JACQUET, J.: 'Metamorphic DBR and tunnel-junction injection: CW RT monolithic long-wavelength VCSEL', IEEE J. Sel. Top. Quantum Electron., 1999, 5, pp. 520-529
-
(1999)
IEEE J. Sel. Top. Quantum Electron.
, vol.5
, pp. 520-529
-
-
Boucart, J.1
Starck, C.2
Gaborit, F.3
Plais, A.4
Bouché, N.5
Derouin, E.6
Remy, J.C.7
Bonnet-Gamard, J.8
Goldstein, L.9
Fortin, C.10
Carpentier, D.11
Salet, P.12
Brilbuet, F.13
Jacquet, J.14
-
5
-
-
0033719394
-
High-performance 1.6μm single-epitaxy top-emitting VCSEL
-
YUEN, W., LI, G.S., NABIEV, R.F., BOUCART, J., KNER, P., STONE, R.J., ZHANG, D., BEAUDOIN, M., ZHENG, T., HE, C., YU, K., JANSEN, M., WORLAND, D.P., and CHANG-HASNAIN, C.J.: 'High-performance 1.6μm single-epitaxy top-emitting VCSEL', Electron. Lett., 2000, 36, pp. 1121-1123
-
(2000)
Electron. Lett.
, vol.36
, pp. 1121-1123
-
-
Yuen, W.1
Li, G.S.2
Nabiev, R.F.3
Boucart, J.4
Kner, P.5
Stone, R.J.6
Zhang, D.7
Beaudoin, M.8
Zheng, T.9
He, C.10
Yu, K.11
Jansen, M.12
Worland, D.P.13
Chang-Hasnain, C.J.14
-
6
-
-
0024964180
-
High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators
-
MOSELEY, A.J., THOMPSON, J., ROBBINS, D.J., and KEARLEY, M.Q.: 'High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators', Electron. Lett., 1989, 25, pp. 1717-1718
-
(1989)
Electron. Lett.
, vol.25
, pp. 1717-1718
-
-
Moseley, A.J.1
Thompson, J.2
Robbins, D.J.3
Kearley, M.Q.4
-
7
-
-
0029357993
-
Accurate refractive index measurements of doped and undoped InP by a grating coupling technique
-
MARTIN, P., SKOURI, E.M., CHUSSEAU, L., and ALIBERT, C.: 'Accurate refractive index measurements of doped and undoped InP by a grating coupling technique', Appl. Phys. Lett., 1995, 67, pp. 881-883
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 881-883
-
-
Martin, P.1
Skouri, E.M.2
Chusseau, L.3
Alibert, C.4
-
8
-
-
0026881888
-
Refractive indexes of (Al, Ga, In) as epilayers on InP for optoelectronic applications
-
MONDRY, M.J., BABIC, D.I., BOWERS, J.E., and COLDREN, L.A.: 'Refractive indexes of (Al, Ga, In) As epilayers on InP for optoelectronic applications', IEEE Photonics Technol. Lett., 1992, 4, pp. 627-630
-
(1992)
IEEE Photonics Technol. Lett.
, vol.4
, pp. 627-630
-
-
Mondry, M.J.1
Babic, D.I.2
Bowers, J.E.3
Coldren, L.A.4
-
9
-
-
0031139942
-
Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5μm wavelength
-
DEBRAY, J.P., LUGAGNE-DELPON, E., LE ROUX, G., OUDAR, J.L., and QUILLEC, M.: 'Low threshold InGaAlAs monolithic vertical cavity bistable device at 1.5μm wavelength', Appl. Phys. Lett., 1997, 70, pp. 2858-2860
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 2858-2860
-
-
Debray, J.P.1
Lugagne-Delpon, E.2
Le Roux, G.3
Oudar, J.L.4
Quillec, M.5
-
10
-
-
0032164568
-
Highly selective and widely tunable 1.55μm InP/ air gap micromachined Fabry-Perot filter for optical communications
-
SPISSER, A., LEDANTEC, R., SEASSAL, C., LECLERCQ, J.L., BENYATTOU, T., RONDI, D., BLONDEAU, R., GUILLOT, G., and VICTOROVITCH, P.: 'Highly selective and widely tunable 1.55μm InP/ air gap micromachined Fabry-Perot filter for optical communications', IEEE Photonics Technol. Lett., 1998, 10, pp. 1259-1261
-
(1998)
IEEE Photonics Technol. Lett.
, vol.10
, pp. 1259-1261
-
-
Spisser, A.1
Ledantec, R.2
Seassal, C.3
Leclercq, J.L.4
Benyattou, T.5
Rondi, D.6
Blondeau, R.7
Guillot, G.8
Victorovitch, P.9
|