EUV mask blank: Defect detection at 100 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5037 II, Issue , 2003, Pages 860-871

  Hue, J ^a   Quesnel, E ^a   Pelle C ^a   Muffato, V ^a   Carini, G ^a   Favier, S ^b   Besson, P ^b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Blank; Counting device; Defect density; Extreme ultraviolet lithography; Glass substrate; Particle; Scattering; Sensitivity; Silicon substrate; Stray light

Indexed keywords

COMPUTER AIDED SOFTWARE ENGINEERING; DEFECTS; GLASS; LIGHT SCATTERING; LITHOGRAPHY; OPTICAL VARIABLES MEASUREMENT; RADIATION COUNTERS; RAYLEIGH SCATTERING; SEMICONDUCTING SILICON; STRAY LIGHT; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

COUNTING DEVICE; DEFECT DENSITY; EXTREME ULTRAVIOLET LITHOGRAPHY; MASK BLANK;

MASKS;

EID: 0141612922     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.482329     Document Type: Conference Paper

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