Effects of quencher ability on profile in chemically amplified resist system

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5039 II, Issue , 2003, Pages 1086-1097

  Kim, Deogbae ^a   Kim, Hyun Jin ^a   Cho, Sook Hee ^a   Lee, Dong Hwal ^a   Im, Kwang Hyi ^a   Yoo, Min Ja ^a   Lee, Sang Hyang ^a   Kim, Jaehyun ^a   Kim, Jin Soo ^b   Kim, Hyung Soo ^b  

^a Dongjin Semichem Co Ltd   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; DIFFUSION IN SOLIDS; ETCHING; MOLECULAR STRUCTURE; NITROGEN; PHOTOLITHOGRAPHY; QUENCHING; SURFACE ROUGHNESS;

CHEMICALLY AMPLIFIED RESIST SYSTEM; KRYPTON FLUORIDE LITHOGRAPHY; SLOPED PROFILE;

PHOTORESISTS;

EID: 0141611060     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.485161     Document Type: Conference Paper

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