Surface morphology of 4H-SiC inclined towards 〈11̄00〉 and 〈112̄0〉 grown by APCVD using the Si2Cl6+C3H8 system

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 139-142

  Masuda, Y ^a   Ohshima, S ^a   Jacob, C ^a   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; ETCHING; MORPHOLOGY; NUCLEATION; PROPANE; SILANES; SURFACE ROUGHNESS; SURFACES; THICKNESS MEASUREMENT;

HEXACHLORODISILANE; IN SITU ETCHING; MICROSTEP STRUCTURES; STEP BUNCHING;

SILICON CARBIDE;

EID: 0035126672     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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