Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 629-632

  Redmann, F ^a   Kawasuso, A ^a,b   Petters, K ^a   Itoh, H ^b   Krause Rehberg, R ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

Annealing; Positron annihilation; Radiation defects; SiC

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; ELECTRON IRRADIATION; POSITRON ANNIHILATION SPECTROSCOPY; RADIATION EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS;

POSITRON LIFETIME MEASUREMENTS;

SILICON CARBIDE;

EID: 17644444774     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00764-5     Document Type: Article

References (10)