Characterization of deep levels in 3C-SiC by optical-capacitance-transient spectroscopy

Materials Research Society Symposium - Proceedings

Volumn 719, Issue , 2002, Pages 167-171

  Nakakura, Y ^a   Kato, M ^a   Ichimura, M ^a   Arai, E ^a   Tokuda, Y ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b AICHI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; THERMAL CONDUCTIVITY;

OPTICAL-CAPACITANCE-TRANSIENT SPECTROSCOPY (O-CTS);

SILICON CARBIDE;

EID: 0036450482     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-719-f6.4     Document Type: Conference Paper

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