Silicon carbide surface structure investigated by synchrotron radiation-based x-ray diffraction

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1881-1885

  Enriquez, H ^a   D'angelo, M ^a   Aristov, V Yu ^a,e   Derycke, V ^a   Soukiassian, P ^a   Renaud, G ^b   Barbier, A ^b   Chiang, S ^c   Semond, F ^d  

^a DIF   (France)

^b CEA GRENOBLE   (France)

^c UNIVERSITY OF CALIFORNIA   (United States)

^d CRHEA CNRS   (France)

^e RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DIMERS; PHASE TRANSITIONS; SYNCHROTRON RADIATION; X RAY DIFFRACTION ANALYSIS;

ATOMIC STRUCTURES;

SILICON CARBIDE;

EID: 0141569679     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1588650     Document Type: Conference Paper

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