High temperature dismantling of Si atomic lines on β-SiC(100)

Surface Science

Volumn 440, Issue 1-2, 1999, Pages

  Aristov, V Yu ^a,b   Douillard, L ^a   Soukiassian, P ^a,b  

^a CEA SACLAY   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; DIFFUSION; HIGH TEMPERATURE OPERATIONS; MELTING; MOLECULAR DYNAMICS; MORPHOLOGY; SILICON; SILICON CARBIDE; SURFACE ROUGHNESS; SURFACE TOPOGRAPHY;

ATOMIC LINE DYNAMICS; HIGH TEMPERATURE DISMANTLING; ONE BY ONE DIMER REMOVAL; SURFACE DIFFUSION; SURFACE STRESS;

SCANNING TUNNELING MICROSCOPY;

EID: 0033207202     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00767-0     Document Type: Article

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