Reflection high-energy electron diffraction pattern of GaN grown on 6H-SiC by metalorganic molecular beam epitaxy using AlGaN template

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 21, Issue 4, 2003, Pages 1822-1824

  Honda, Tohru ^a   Kawanishi, Hideo ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRON DIFFRACTION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; PARAMETER ESTIMATION; PATTERN RECOGNITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON NITRIDE; SUBSTRATES;

CATALYTIC REACTIONS;

GALLIUM NITRIDE;

EID: 0141458054     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1585076     Document Type: Conference Paper

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