Lattice constant of GaN grown on 6H-SiC by MOMBE

Applied Surface Science

Volumn 159, Issue , 2000, Pages 468-471

  Honda, Tohru ^a   Fujita, Naoya ^a   Maki, Kyousuke ^a   Yamamoto, Youichi ^a   Kawanashi, Hideo ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; STRAIN; THERMAL EXPANSION; X RAY DIFFRACTION ANALYSIS;

GALLIUM NITRIDE; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034204825     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00082-9     Document Type: Article

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