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Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 74-86

Growth of group III nitrides by metalorganic molecular beam epitaxy

(3) Abernathy, C R a MacKenzie, J D a Donovan, S M a

a University of Florida (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MORPHOLOGY; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; CARBON; COMPOSITION EFFECTS; CRYSTAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SURFACE STRUCTURE;

HOLE CONCENTRATION; METALORGANIC MOLECULAR BEAM EPITAXY (MOMBE); ULTRAHIGH VACUUM (UHV) ENVIRONMENT;

SEMICONDUCTOR GROWTH;

EID: 0031150298 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00074-2 Document Type: Article

Times cited : (22)

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