High-speed GaN growth and compositional control of GaN-AlGaN superlattice quasi-ternary compounds by RF-radical source molecular beam epitaxy

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 3, 1998, Pages 550-556

  Kishino, Katsumi ^a,b,c,d,e   Kikuchi, Akihiko ^b,f,g,h,i   Yoshizawa, Masaki ^b   Fujita, Nobuhiko ^b   Kushi, Kouichi ^b   Sasamoto, Hajime ^b  

^a IEEE   (Japan)

^b SOPHIA UNIVERSITY   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^e JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^f Elec Electronics Eng Sophia Univ   (United States)

^g Japan Society of Applied Phyiscs   (Japan)

^h OPTICAL SOCIETY OF AMERICA   (United States)

ⁱ Foundation of Ando Laboratory

Author keywords

AlGaN; GaN; Quasi ternary compounds; RF MBE superlattice

Indexed keywords

MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; TERNARY SYSTEMS;

RADIOFREQUENCY MOLECULAR BEAM EPITAXY (RF MBE); SHUTTER CONTROL METHOD;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032067112     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.704116     Document Type: Article

References (16)

1. S. Strite and H. Morkoc, "GaN, AlN, and InN: A review," J. Vac. Sci. Technol. B, vol. 10, pp. 1237-1266, 1992.
2. I. Akasaki, S. Sota, H. Sakai, T. Tanaka, M. Koike, and H. Amano, "Shortest wavelength semiconductor laser diode," Electron. Lett., vol. 32, pp. 1105-1106, 1996.
3. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well-structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pp. L74-L76, 1996.
4. S. Nakamura, "In situ monitoring of GaN growth using inerference effects," Jpn. J. Appl. Phys., vol. 30, pp. 1620-1627, 1991.
5. M. A. L. Johnson, Z. Yu, C. Boney, W. C. Hughes, J. W. Cook, Jr., J. F. Schetzina, H. Zhao, B. J. Skromme, and J. A. Edmond, "Reactive MBE growth of GaN and GaN:H on GaN/SiC substrates," Mater. Res. Soc. Symp. Proc., vol. 449, pp. 215-220, 1997.
6. W. C. Hughes, W. H. Rowland, Jr., M. A. L. Johnson, S. Fujita, J. W. Cook, Jr., and J. F. Schetzina, "Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates GaN films on GaN/SiC substrates," J. Vac. Sci. Technol. B, vol. 13, pp. 1571-1577, 1995.
7. R. Beresford, K. S. Stevens, Q. Cui, A. Schwartzman, and H. Cheng, "Material and device characteristics of MBE grown GaN using a new RF plasma source," Mater. Res. Soc. Symp. Proc., vol. 449, pp. 361-366, 1997.
8. N. Grandjean, M. Leroux, M. Laügt, and J. Massies, "Gas source molecular beam epitaxy of Wurtzite GaN on sapphire substrates using GaN buffer layers," Appl. Phys. Lett., vol. 71, pp. 240-242, 1997.
9. A. Kikuchi, H. Hoshi, and K. Kishino, "Two-dimensional growth of GaN on various substrates by gas source molecular beam epitaxy using RF-radical nitrogen source," Jpn. J. Appl. Phys., vol. 34, pp. 1153-1158, 1995.
10. xN filmes by ECR-MBE," Mater. Res. Soc. Symp. Proc., vol. 449, pp. 597-602, 1997.
11. N. Grandjean, J. Massies, and M. Leroux, "Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers," Appl. Phys. Lett., vol. 69, pp. 2071-2073, 1996.
12. Y. Kaneko, I. Nomura, K. Kishino, and A. Kikuchi, "600-nm wavelength range GaInP/AlInP quasiquaternary compounds and lasers prepared by gas-source molecular-beam epitaxy," J. Appl. Phys., vol. 74, pp. 819-824, 1993.
13. M. Suzuki, T. Uenoyama, and A. Yanase, "First-principles calculations of effective-mass parameters of AlN and GaN," Phys. Rev. B, vol. 52, pp. 8132-8139, 1995.
14. C. G. Van de Walle and J. Neugebauer, "Small valence-band offsets at GaN/InGaN heterojunctions," Appl. Phys. Lett., vol. 70, pp. 2577-2579, 1997.
15. T. Takeuchi, H. Takeuchi, S. Sota, H. Sakai, H. Amano, and I. Akasaki, "Optical properties of strained AlGaN and GaInN on GaN," Jpn. J. Appl. Phys., vol. 36, pp. L117-L119, 1997.
16. Y. Horikoshi, M. Kawashima, and H. Yamaguci, "Migration-enhanced epitaxy of GaAs and AlGaN," Jpn. J. Appl. Phys., vol. 27, pp. 169-179, 1988.