Deposition of amorphous GaN by compound source molecular beam epitaxy for Electroluminescent devices

Physica Status Solidi (A) Applied Research

Volumn 192, Issue 2, 2002, Pages 461-465

  Honda, T ^a   Inao, Y ^a   Konno, K ^a   Mineo, K ^a   Kumabe, S ^a   Kawanishi, H ^a  

^a KOGAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ENERGY GAP; GALLIUM NITRIDE; LIGHT EMITTING DIODES; LUMINESCENT DEVICES; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SPECTRUM ANALYSIS; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

BAND EDGES;

AMORPHOUS FILMS;

EID: 0036672393     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200208)192:2<461::AID-PSSA461>3.0.CO;2-M     Document Type: Conference Paper

References (14)