The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon

Journal of Electronic Materials

Volumn 26, Issue 11, 1997, Pages 1361-1364

  Jones, K S ^a   Chen, J ^a   Bharatan, S ^a   Jackson, J ^b   Rubin, L ^b   Puga Lambers, M ^a   Venables, D ^c  

^a University of Florida   (United States)

^b EATON CORPORATION   (United States)

^c North Carolina State University   (United States)

Author keywords

Amorphization; Dose rate; Implant temperature; Ion implantation

Indexed keywords

EID: 0042059293     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0085-9     Document Type: Article

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