Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 1999, Pages 259-262

  Lee, Woosung ^a   Lee, Seungho ^a   Ahn, Taejeong ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC CURRENTS; GATES (TRANSISTOR); HOT CARRIERS; RELIABILITY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THRESHOLD VOLTAGE;

GATE BIAS CONDITION; SHALLOW TRENCH ISOLATION; SUBSTRATE CURRENT;

MOSFET DEVICES;

EID: 0032645996     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)