Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: The case of InAs/In0.50Ga0.50As/GaAs(1 1 1)A

Surface Science

Volumn 540, Issue 2-3, 2003, Pages 363-378

  Zepeda Ruiz, Luis A ^a   Weinberg, W Henry ^b   Maroudas, Dimitrios ^c  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b SYMYX TECHNOLOGIES   (United States)

^c University of Massachusetts Amherst   (United States)

Author keywords

Computer simulations; Epitaxy; Equilibrium thermodynamics and statistical mechanics; Gallium arsenide; Indium arsenide; Semiconductor semiconductor interfaces; Semiconductor semiconductor thin film structures

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR ORIENTATION; MORPHOLOGY; RELAXATION PROCESSES; STATISTICAL MECHANICS; SUBSTRATES; THERMODYNAMICS; THIN FILMS;

STRAIN RELAXATION;

INDIUM COMPOUNDS;

EID: 0043062628     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00870-7     Document Type: Article

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