Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: The case of InAs/In0.50Ga0.50As/GaAs(1 1 1)A

Surface Science

Volumn 540, Issue 2-3, 2003, Pages 363-378

  Zepeda Ruiz, Luis A ^a   Weinberg, W Henry ^b   Maroudas, Dimitrios ^c  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b SYMYX TECHNOLOGIES   (United States)

^c University of Massachusetts   (United States)

Author keywords

Computer simulations; Epitaxy; Equilibrium thermodynamics and statistical mechanics; Gallium arsenide; Indium arsenide; Semiconductor semiconductor interfaces; Semiconductor semiconductor thin film structures

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR ORIENTATION; MORPHOLOGY; RELAXATION PROCESSES; STATISTICAL MECHANICS; SUBSTRATES; THERMODYNAMICS; THIN FILMS;

STRAIN RELAXATION;

INDIUM COMPOUNDS;

EID: 0043062628     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00870-7     Document Type: Article

References (53)

1. Schowalter L.J. MRS Bull. 21(4):1996;. and references therein.
2. Levi B.G. Phys. Today. 49:1996;22.
3. Hull R., Bean J.C. Wilardson R.K., Beer A.C. Semiconductors and Semimetals. vol. 33:1991;1 Academic Press, San Diego.
4. Picraux S.T., Doyle B.L., Tsao J.Y. Wilardson R.K., Beer A.C. Semiconductors and Semimetals. vol. 33:1991;139 Academic Press, San Diego.
5. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 27:1974;118.
6. Matthews J.W., Blakeslee A.E. J. Crystal Growth. 32:1974;265.
7. Matthews J.W. Nabarro F.R.N. Dislocations in Solids. vol. 2:1979;461 North-Holland, Amsterdam.
8. Leonard D., Krishnamurthy M., Reaves C.M., DenBaars S.P., Petroff P.M. Appl. Phys. Lett. 63:1993;3203.
9. Bressler-Hill V., Lorke A., Varma S., Petroff P.M., Pond K., Weinberg W.H. Phys. Rev. B. 50:1994;8479.
10. Bressler-Hill V., Varma S., Lorke A., Nosho B.Z., Weinberg W.H. Phys. Rev. Lett. 74:1995;3209.
11. Srolovitz D.J. Acta Metall. 37:1989;621.
12. Yang W.H., Srolovitz D.J. J. Mech. Phys. Solids. 42:1994;1551.
13. Spencer B.J., Voorhees P.W., Davis S.H. Phys. Rev. Lett. 67:1991;3696.
14. Spencer B.J., Voorhees P.W., Davis S.H. J. Appl. Phys. 73:1993;4955.
15. Spencer B.J., Davis S.H., Voorhees P.W. Phys. Rev. B. 47:1993;9760.
16. Lo Y.H. Appl. Phys. Lett. 59:1991;2311.
17. Powell A.R., Iyer S.S., LeGoues F.K. Appl. Phys. Lett. 64:1994;1865.
18. Freund L.B., Nix W.D. Appl. Phys. Lett. 69:1996;173.
19. Freund L.B. Mater. Res. Soc. Symp. Proc. 436:1997;393.
20. Freund L.B. Appl. Phys. Lett. 70:1997;3519.
21. Gösele U., Tong Q.Y. Ann. Rev. Mater. Sci. 28:1998;215.
22. Vanhollebeke K., Moerman I., Van Daele P., Demeester P. Prog. Cryst. Growth Charact. Mater. 41:2000;1.
23. Zhang X.M., Pashley D.W., Hart L., Neave J.H., Fawcett P.N., Joyce B.A. J. Crystal Growth. 131:1993;300.
24. Belk J.G., Sudijono J.L., Zhang X.M., Neave J.H., Jones T.S., Joyce B.A. Phys. Rev. Lett. 78:1997;475.
25. Yamaguchi H., Belk J.G., Zhang X.M., Sudijono J.L., Fahy M.R., Jones T.S., Pashley D.W., Joyce B.A. Phys. Rev. B. 55:1997;1337.
26. Pelzel R.I., Zepeda-Ruiz L.A., Nosho B.Z., Li Y., Weinberg W.H., Maroudas D. Appl. Phys. Lett. 76:2000;3017.
27. Zepeda-Ruiz L.A., Pelzel R.I., Nosho B.Z., Weinberg W.H., Maroudas D. J. Appl. Phys. 9:2001;2689.
28. Maroudas D., Zepeda-Ruiz L.A., Weinberg W.H. Surf. Sci. 411:1998;L865.
29. Maroudas D., Zepeda-Ruiz L.A., Weinberg W.H. Appl. Phys. Lett. 73:1998;753.
30. Zepeda-Ruiz L.A., Maroudas D., Weinberg W.H. J. Appl. Phys. 85:1999;3677.
31. Zepeda-Ruiz L.A., Nosho B.Z., Pelzel R.I., Weinberg W.H., Maroudas D. Surf. Sci. 441:1999;L911.
32. Nosho B.Z., Zepeda-Ruiz L.A., Pelzel R.I., Weinberg W.H., Maroudas D. Appl. Phys. Lett. 75:1999;829.
33. Zepeda-Ruiz L.A., Pelzel R.I., Weinberg W.H., Maroudas D. Appl. Phys. Lett. 77:2000;3352.
34. Zhang Z.C., Yang S.Y., Zhang F.Q., Xu B., Zheng Y.P., Chen Y.H., Wang Z.G. J. Crystal Growth. 247:2002;126.
35. Lin Y.-R., Wu S.-T. Surf. Sci. 516:2002;L535.
36. Keating P.N. Phys. Rev. 145:1966;637.
37. Martin R.M. Phys. Rev. B. 1:1970;4005.
38. Martins J.L., Zunger A. Phys. Rev. B. 30:1984;6217.
39. Allen M.P., Tildesley D.J. Computer Simulation of Liquids. 1990;Oxford University Press, Oxford.
40. Yashar P., Pillai M.R., Mirecki-Millunchick J., Barnett S.A. J. Appl. Phys. 83:1998;2010.
41. Foiles S.M. Phys. Rev. B. 32:1985;7685.
42. Kelires P.C., Tersoff J. Phys. Lett. 63:1989;1164.
43. Landau L.D., Lifshitz E.M. Course of Theoretical Physics: Theory of Elasticity. vol. 7:1986;Pergamon Press, Oxford.
44. Hirth J.P., Lothe J. Theory of Dislocations. 1982;Wiley, New York.
45. Nabarro F.R.N. Theory of Crystal Dislocations. 1987;Dover, New York.
46. Dahlquist G., Björck Å. Numerical Methods. 1974;Prentice-Hall, Englewood Cliffs, NJ.
47. Tersoff J. Phys. Rev. Lett. 79:1997;4934.
48. Jonsdottir F., Freund L.B. Mech. Mater. 20:1995;337.
49. Jonsdottir F. Model. Simul. Mater. Sci. Eng. 3:1995;503.
50. Bonnet R. Philos. Mag. A. 73:1996;1193.
51. Fitzgerald E.A., Samavedam S.B. Thin Solid Films. 294:1997;3.
52. Samavedam S.B., Fitzgerald E.A. J. Appl. Phys. 81:1997;3108.
53. Springholz G. Appl. Phys. Lett. 75:1999;3099.