In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (0 0 1) substrate

Journal of Crystal Growth

Volumn 247, Issue 1-2, 2003, Pages 126-130

  Zhang, Z C ^a   Yang, S Y ^a   Zhang, F Q ^a   Xu, B ^a   Zeng, Y P ^a   Chen, Y H ^a   Wang, Z G ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Dislocation; A1. Interfaces; A1. Strain; A3. Molecular beam epitaxy; B2. Semiconductor III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); FILM GROWTH; INTERFACES (MATERIALS); PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

BUFFERS;

MOLECULAR BEAM EPITAXY;

EID: 0037211091     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01950-4     Document Type: Article

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