A new, high-voltage 4H-SiC lateral dual sidewall Schottky (LDSS) rectifier: Theoretical investigation and analysis

IEEE Transactions on Electron Devices

Volumn 50, Issue 7, 2003, Pages 1690-1693

  Kumar, M Jagadesh ^a   Reddy Linga, C ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Lateral device; Schottky diodes; Semiconductor device breakdown; SiC; Two dimensional simulation

Indexed keywords

COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; SILICON CARBIDE;

LATERAL DEVICES;

ELECTRIC RECTIFIERS;

EID: 0043028314     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.813783     Document Type: Article

References (10)

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