Lateral thin-film Schottky (LTFS) rectifier on SOI: A device with higher than plane parallel breakdown voltage

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 181-184

  Singh, Yashvir ^a   Kumar, M Jagadesh ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Barrier lowering; Breakdown voltage; Lateral Schottky; Numerical simulation; Thin film SOI

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SILICA; SILICON ON INSULATOR TECHNOLOGY; THIN FILMS;

BARRIER LOWERING; EPITAXIAL DOPING; FILM THICKNESS; LATERAL THIN FILM SCHOTTKY RECTIFIER; PARALLEL BREAKDOWN VOLTAGE;

ELECTRIC RECTIFIERS;

EID: 0036252348     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974767     Document Type: Article

References (7)

1. Trench MOS barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage
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4. Silcon carbide high-power devices
5. 2 interface