A new low-loss lateral trench sidewall Schottky (LTSS) rectifier on SOI with high and sharp breakdown voltage

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1316-1319

  Kumar, M Jagadesh ^a   Singh, Yashvir ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Barrier lowering; Breakdown voltage; Lateral schottky; Numerical simulation; Silicon on insulator (SOI)

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; TWO DIMENSIONAL; VOLTAGE MEASUREMENT;

BARRIER LOWERING; LATERAL CONVENTIONAL SCHOTTKY; LATERAL TRENCH SIDEWALL SCHOTTKY; SOFTWARE PACKAGE MEDICI; VOLTAGE DROP;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036638025     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013294     Document Type: Article

References (8)

1. Low-loss Schottky rectifier utilizing trench sidewall as junction barrier controlled Schottky contact
2. Trench MOS barrier Schottky (TMBS) rectifier: A Schottky rectifier with higher than parallel plane breakdown voltage
3. The graded doped trench MOS barrier Schottky rectifier: A low forward drop high voltage rectifier
4. Lateral smart-discrete process and devices based on thin-layer silicon-on-insulator
5. Novel high voltage SOI structures
6. MEDICI 4.0, a 2D device simulator
7. Novel lateral merged double Schottky (LMDS) rectifier: Proposal and design
8. A new 4H-SiC lateral merged double Schottky (LMDS) rectifier with excellent forward and reverse characteristics