Physical and electrical degradation of ZrO2 thin films with aluminum electrodes

Materials Science and Engineering: B

Volumn 102, Issue 1-3, 2003, Pages 108-112

  Nam, Seok Woo ^a,b   Yoo, Jung Ho ^a   Nam, Suheun ^a   Ko, Dae Hong ^a   Ku, Ja Hum ^b   Yang, Cheol Woong ^c  

^a Yonsei University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Al; Interfacial layer; Post annealing; Pt; ZrO2 film

Indexed keywords

ALUMINUM; DEGRADATION; ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; POLYCRYSTALLINE MATERIALS; SURFACE CHEMISTRY; ZINC OXIDE;

ELECTRICAL DEGRADATION;

THIN FILMS;

EID: 0043014548     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(03)00014-X     Document Type: Conference Paper

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