Effect of buffer layer on epitaxial growth of high-magnesium-content BeMgZnSe lattice matched to GaP(001) substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 6 A, 2003, Pages

  Niiyama, Yuuki ^a   Yokoyama, Takeshi ^a   Watanabe, Masahiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Be chalcogenides; Buffer layer; GaP; High magnesium content; Lattice match; Phase separation; Ultraviolet emission

Indexed keywords

AGGLOMERATION; BERYLLIUM COMPOUNDS; CRYSTAL LATTICES; CRYSTALLOGRAPHY; MAGNESIUM PRINTING PLATES; MORPHOLOGY; PHASE SEPARATION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; ULTRAVIOLET RADIATION; X RAY DIFFRACTION;

BERYLLIUM CHALCOGENIDES; BUFFER LAYER; GALLIUM PHOSPHIDE; HIGH MAGNESIUM CONTENT; LATTICE MATCH;

MOLECULAR BEAM EPITAXY;

EID: 0042745439     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l599     Document Type: Letter

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