New developments in the heteroepitaxial growth of Be-chalcogenides based semiconducting alloys

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 662-665

  Chauvet, C ^a   Bousquet, V ^a   Tournie E ^a   Faurie, J P ^a  

^a Centre de Recherches sur l'Hétéroepitaxie et Ses Applications   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; ENERGY GAP; ETCHING; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; TERNARY SYSTEMS; X RAY DIFFRACTION ANALYSIS;

QUATERNARY ALLOYS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0032630052     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0050-x     Document Type: Article

References (13)

1. A. Waag, F. Fischer, K. Schull, T. Baron, H.J. Lugauer, Th. Litz, U. Zehnder, W. Ossau, T. Gerhard, M. Keim, G. Reuscher and G. Landwerh, Appl. Phys. Lett. 70, 280 (1997).
2. C. Vèrié, Semiconductors Heteroepitaxy, ed. B. Gil and R.L. Aulombard, (Singapore: World Scientific, 1995), p. 73.
3. W.Z. Zachariasen, Z. Phys. Chem. 119, 210 (1926), 124, 277 (1926) and 124, 440 (1926).
4. W.Z. Zachariasen, Z. Phys. Chem. 119, 210 (1926), 124, 277 (1926) and 124, 440 (1926).
5. W.Z. Zachariasen, Z. Phys. Chem. 119, 210 (1926), 124, 277 (1926) and 124, 440 (1926).
6. V. Bousquet, E. Tournié, M. Laügt, P. Vennéguès and J.P. Faurie, Appl. Phys. Lett. 70, 3564 (1997).
7. C. Chauvet, C. Guénaud, P. Vennéguès, E. Tournié and J.P. Faurie, Proc. Xth MBE Conf., Cannes 1998, J. Cryst. Growth, to be published.
8. A. Waag, F. Fischer, H.J. Lugauer, Th. Litz, J. Laubender, U. Lunz, U. Zehnder, W. Ossau, T. Gerhardt, M. Möller and G. Landwerh, J. Appl. Phys. 80, 792 (1996).
9. L.I. Romano, R.D. Bringans, X. Zhou and W.P. Kirk, Phys. Rev. B 52, 11201 (1995).
10. R.D. Bringans, D.K. Biegelsen, L.E. Swartz, F.A. Ponce and J.C. Tramontana, Phys. Rev. B 45, 13400 (1992).
11. C. Chauvet, P. Vennéguès, E. Tournié and J.P. Faurie, Appl. Phys. Lett. 73, 957 (1998).
12. V. Bousquet, E. Tournié and J.P. Faurie, J. Cryst. Growth 192, 102 (1998).
13. J.P Faurie, V. Bousquet, P. Brunet and E. Tournié, J. Cryst. Growth 184/185, 11 (1998).