Growth and characterization of ZnCdSe/BeZnTe II-VI compound type-II superlattices on InP substrates and their application for visible light emitting devices

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 12, 2001, Pages 6747-6752

  Che, Song Bek ^a   Nomura, Ichirou ^a   Takada, Tomoyuki ^a   Kikuchi, Akihiko ^a   Shimomura, Kazuhiko ^a   Kishino, Katsumi ^a  

^a SOPHIA UNIVERSITY   (Japan)

Author keywords

II VI compounds; InP substrate; Light emitting diode (LED); Molecular beam epitaxy (MBE); Type II hetero structure; ZnCdSe BeZnTe superlattice

Indexed keywords

CHARACTERIZATION; CRYSTAL STRUCTURE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

DOUBLE HETEROSTRUCTURE; EMISSION INTENSITY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035710148     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.6747     Document Type: Article

References (6)