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Volumn 175-176, Issue PART 1, 1997, Pages 532-540

II-VI light-emitting devices based on beryllium chalcogenides

Author keywords

Be chalcogenides; Laser diode; Light emitting diodes

Indexed keywords

BERYLLIUM COMPOUNDS; CHEMICAL BONDS; ENERGY GAP; HETEROJUNCTIONS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR SUPERLATTICES;

EID: 0031141819     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00127-9     Document Type: Article
Times cited : (30)

References (27)
  • 8
    • 0040831548 scopus 로고
    • B. Gil, R.-L. Aulombard (Eds.), World Scientific, Singapore
    • C. Verie, in: B. Gil, R.-L. Aulombard (Eds.), Semiconductor Heteroepitaxy, World Scientific, Singapore, 1995, p. 2145.
    • (1995) Semiconductor Heteroepitaxy , pp. 2145
    • Verie, C.1
  • 14
    • 0040831547 scopus 로고    scopus 로고
    • Proc. Physics and simulation of optoelectronic devices IV
    • S. Nakamura, Proc. Physics and Simulation of Optoelectronic Devices IV, SPIE 2693 (1996) 29.
    • (1996) SPIE , vol.2693 , pp. 29
    • Nakamura, S.1
  • 20
    • 34548836106 scopus 로고
    • G. Mandel, F.F. Morehead and P.R. Wagner, Phys. Rev. 136 (1964) A826; G. Mandel, Phys. Rev. 134 (1964) A1073.
    • (1964) Phys. Rev. , vol.134
    • Mandel, G.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.